IndiumV3, Main, Repository, bibRecord, 010488

Band-edge luminescence in quaternary AllnGaN light-emitting diodes

Identifieur interne : 010488 ( Main/Repository ); précédent : 010487; suivant : 010489

Band-edge luminescence in quaternary AllnGaN light-emitting diodes

Auteurs : RBID : Pascal:01-0073863

Descripteurs français

Pascal (Inist)
- 8560J, 8535B, Etude expérimentale, Aluminium composé, Indium composé, Gallium composé, Semiconducteur bande interdite large, Semiconducteur III-V, Diode électroluminescente, Recombinaison électron trou.

English descriptors

KwdEn :
- Aluminium compounds, Electron-hole recombination, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Light emitting diodes, Wide band gap semiconductors, quantum well devices.

Abstract

Operation of InGaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with quaternary AlInGaN barriers at room and elevated temperatures is reported. The devices outperform conventional GaN/InGaN MQW LEDs, especially at high pump currents. From the measurements of quantum efficiency and total emitted power under dc and pulsed pumping, we show the emission mechanism for quaternary barrier MQWs to be predominantly linked to band-to-band transitions. This is in contrast to localized state emission observed for conventional InGaN/InGaN and GaN/InGaN LEDs. The band-to-band recombination with an increased quantum-well depth improves the high-current performance of the quaternary barrier MQW LEDs, making them attractive for high-power solid-state lighting applications. © 2001 American Institute of Physics.

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Pascal:01-0073863

Le document en format XML

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Band-edge luminescence in quaternary AllnGaN light-emitting diodes

Band-edge luminescence in quaternary AllnGaN light-emitting diodes

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

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Pour mettre un lien sur cette page dans le réseau Wicri